A great amount of experimental effort has been devoted to the
development of reliable means for the control and measurement of
oxygen content (8+
), and to its use as an effective variable
for investigating transport properties. The current understanding
relating to the results of annealing experiments upon the
stoichiometric Bi-2212 phase is briefly reviewed here. A substantial body
of literature also exists regarding the use of cation substitution as a means
to similar ends. The dopant concentration is an extra variable which may
be more easily determined than
, and dopants can also be used
to extend the range of variability
. The potential
additional structural effects of cation ordering and phase separation,
however, add to the complexity, and discussion of cation doping experiments
will therefore be confined to appropriate points where they offer additional
enlightenment not available through annealing alone.
The earliest literature on annealing experiments, effectively that prior
to 1990, went only as far as to demonstrate that oxygen content
was an important variable. The details, however, often relayed apparently
conflicting results. For instance, the influence on T
of oxygen
treatment of samples was reported to have little effect by Sunshine
[45], while a decrease in T
was reported by
Morris [135], and conversely increases in T
by
Niu [136] and Forro [114]. The maximum attainable
T
was also widely inconsistent, and Bi-2212 was frequently
categorised as an 80K superconductor [137]. These initial
contradictions evaporate when considered relative to the starting
oxygen contents of the samples, and the later understanding of
the T
-
relationship; as already mentioned, under-doped
and over-doped regimes both exist. Some mindfulness for the
influence of the various experimental parameters (such as anneal
temperature, oxygen partial pressure, and anneal period) is also
essential to understanding the changes brought about in a particular
experiment.
An important later experiment in determining the evolution of oxygen
loss with annealing temperature was that of Nagoshi [111].
In this, the unusual application of a mass spectrometer was made to
analysing the evaporating atmosphere from a single crystal annealed
in vacuum at temperatures between 200-600
C. Oxygen loss from the
crystal commenced as low as 220
C, albeit slightly. Two regions of
significance were identified, between 300
C and 500
C, and above
500
C where the evaporation increased strongly. A similar two-stage
process can be seen in the results of Deshimaru [112]
using a different technique, the oxygen loss commenced at 260
C and
initially peaked around 400
C. The results suggest that two distinct
sites participate in the oxygen loss, and that the two are activated
at the different temperatures. This fact is reflected in the results
of numerous experiments where annealing above about 450
C appears
to induce different changes to annealing below this threshold
[122,113]. In particular, this may have its most
striking demonstration in measurements made by Dimesso
[121] who annealed textured Bi-2212 thick films under
flowing nitrogen for various periods at three different temperatures.
The T
varied in an almost identical manner for the two
temperatures of 300
and 400
C; rising from its as-grown
value of 74K up to a maximum of 80K for a few hours annealing, and
falling again for longer periods. But it was only by annealing at
500
C that it was possible to achieve a maximum T
of 85K.
So although the carrier concentration had been varied through the
optimum value by the lower temperature oxygen changes, it appears
necessary to also make alteration to the higher activation energy
site before T
can be maximised. It can be concluded then, that
to facilitate the most complete change in
, temperatures in
excess of 500
C are required.
However, annealing at too high a temperature for too long
is also to be avoided with sample decomposition shown to
accompany annealing as low as 450
C [113]. The
nature of the decomposition is highly dependent upon the annealing
atmosphere as shown in a study by Forro [114] where
annealing at 745
C in various oxygen partial pressures produced
entirely reversible changes except for oxygen partial pressures
below 0.04mbar when permanent decomposition resulted.
The TEM observations by Gao [109] found the majority
of decomposition occurs as Bi-2201 inter-growths, the samples
remaining crystalline. A systematic investigation of the
problem using x-rays by Wu [115] also found inter-growths,
and an additional unidentified phase with a
axis of
9.6
. After 120 hours annealing at 650
C
in air Wu [115] also characterised the additional
problem of Bi evaporation in an oxygen rich atmosphere due to the
evaporation of Bi
O
. Re-cleaving of the crystal surface
and SEM views of the cross section showed this decomposition to
be principally confined to a depth of
10
m, and
that the decomposition did not progress
further below the surface if the annealing was extended.
The actual parameters of oxygen diffusion as a function of temperature
have been investigated by Runde [138]. Using tracer
diffusion of
O in single crystals annealed in one atmosphere of
oxygen it was established that the diffusion is highly anisotropic, and is
relatively slow below 550
C. The a-b plane diffusion was found to have a
far larger diffusion coefficient than that of the much slower c axis diffusion.
The activation energies were also considerably different, suggesting an
interstitial mechanism within the Bi
O
layers with a low activation energy
to be responsible for a-b diffusion: in the c axis no such convenient
interstitial mechanism exists linking the Bi
O
layers, and so diffusion
is limited by the higher activation energy required for oxygen vacancy
creation, presumably in the CuO
planes. The in situ measurement
of the weight change of single crystal samples as a function of time and
temperature, and of crystal dimensions, by Li and Kes [125] showed
further anisotropy within the a-b plane itself with
. The
anisotropic diffusion results overall are very similar to those for Y-123
[139], even down to similar values of activation energies
for the a-b diffusion. In Y-123 the a-b anisotropy is explained by invoking
the influence of the oxygen chains, an oxygen atom jumps from an oxygen chain
into a neighbouring empty row along which it can then move rapidly until
next encountering a chain fragment. The a-b anisotropy in Bi-2212 is almost
certainly the result of the modulation, the rows of Bi concentrated bands
playing a similar role to the chain fragments in Y-123.
In practical terms, then, the change in
can be highly dependent
upon the period of annealing at lower temperatures. In the results of Li [125],
for example, periods in excess of 10 hours, extending to over 90 hours, are
necessary to reach an equilibrium at 500
C. And this is of course strongly
dependent upon crystal dimensions. Above 600
C, however, the diffusion
process is so rapid that annealing for periods longer than one or two hours
will be of little consequence to the equilibrium content. A study by Emmen
[122] in which crystals were annealed in an oxygen atmosphere
for 60 hours at temperatures between 400
C and 800
C, found this anneal
period to be more than sufficient except at the lowest of temperatures below
450
C; the crystal platelets had dimensions 10x3x0.3mm.
The controllable diffusion of oxygen in the Bi-2212 structure
is well facilitated by the annealing methods described: quantifying the
magnitude of the resultant change in oxygen, though, remains
unreliable. The classical thermogravimetric method (TGA) has been commonly
applied, and once contributions from contaminants such as water vapour
and CO
are eliminated, authors show strong faith in the ability of the
technique to measure relative changes in
to
0.001[125]
for single crystals (the problems associated with polycrystalline samples
are far more unpredictable, however). The biggest hurdle comes in
determining an absolute value for
. For this a reference point is
required against which the variations may be marked, and this results
in large
uncertainties which are typically
0.1 [140]. Potential solutions
to this have included iodometric titration, hydrogen reduction, and carbon
reduction methods, but the results show that no two techniques, even
when applied to the same sample, are able to produce the same answer.
This is to be held in mind when comparing the contrary results of
different authors. In addition, it must be remembered that the absolute value
of
is also dependent upon the cation stoichiometry of a crystal,
and so will inevitably be different to some degree for crystals from
different growths. To side step such issues, many experiments have
instead simply reported results as a function of the oxygen partial
pressure during annealing, or as a function of the anneal temperature
instead.
Common agreement upon the form of the T
-
relationship
established by the different means does exist. The first part of the
curve in the overdoped region was measured by Nagoshi [111],
where T
increased with oxygen loss to a plateau. Groen [141]
established the underdoped region, where increasing the oxygen partial
pressure resulted in T
decreasing, and the same relationship
was shown by Mitzi [140]. An important measurement was
the variation of T
across the complete plateau region of the curve,
going from overdoped to
underdoped as the oxygen loss increased, as studied by Li [125].
The variation in
, as measured by TGA for this plateau region, was
0.12: the range of T
was for about 85K to T
to 80K
on the underdoped side (the maximised T
varying between
particular crystals). Similar magnitudes for
were measured by
Mitzi [140], and Morris [135], also using TGA.
Using iodometric titration, Schweizer [142] measured a
range of 0.10 for
going from the plateau down to 65K in the
underdoped regime. An anomalously small change in
of only 0.04
for a range of T
of 40K, measured using TGA on powdered samples, caused
Groen [141] to invoke a charge re-distribution process rather
than oxygen loss to be responsible for the T
changes. The
inaccuracy of TGA when applied to powdered samples would seem a
more reasonable explanation for this inconsistency however. A similar
charge redistribution argument was used by Nagoshi [111]
who measured a tiny change of only 0.006 for a T
increase
of 27K. Again this seems implausible; it can only be speculated
that a flaw in the analysis of the unusual mass spectrometer method
is responsible.
The c axis lattice parameter also varies with
, and an
unequivocal linear relationship exists between c and T
,
for which very good agreement is found amongst authors.
The magnitude of this variation, in which c increases with
increasing T
, is typically of the order of
for
T
of 10K, from a survey of the published values
[125,140,122,141]. Modifications in
the other lattice parameters are less well characterised, a few
reporting no observable changes in a or b, but with more
accurate measurement a small degree of change is apparent. Making
no distinction between the two, Nagoshi [111]
measured an expansion for
and
over a range of 0.005
accompanying oxygen loss, and Mitzi [140] observed a
contraction of 0.005
with oxygen incorporation. Where measured,
no change in the modulation period has ever been discerned to
accompany changes in
[111,140,143].
The observations of Section 4.3.4 are also in accord with this result.
Because of the linear correspondence between c
and T
, explanations have been sought to explain how,
ultimately, the c axis may govern hole concentration. Certainly,
removal of oxygen from the Bi
O
layers could be reasonably
expected to lead to an increase in the separation of neighbouring
BiO bi-layers, and an expansion of c [81].
It was similarly reported by Xue [144] that incorporation of
excess oxygen between the BiO layers causes the repulsion between
the bi-layers to decrease, and hence the SrO-BiO-BiO-SrO slab
to contract. For the c axis expansion to be
involved directly in the control of
, however, an expansion
of the interlayer CuO
to BiO distance would seem a more
necessary component for it to effect charge transfer directly.
A discussion of the effects upon hole concentration, and
whether these alterations actually act in consort with charge
transfer will require more detailed observations.
Within the phase range of Bi-2212 a wide variation in cation
stoichiometry is possible, which can mean samples used in the
different experiments and only nominally identified
as Bi-2212 can have in reality very different cation compositions.
Unfortunately, unless
some extrinsic doping has been specifically introduced as a variable
in an experiment, then cation composition is rarely investigated.
The difference in T
already mentioned [125],
is attributed to just these differences. The work by Deshimaru
[112] has addressed this question by examining
the effects of annealing upon samples with various Sr/Ca ratios,
Bi
Sr
Ca
Cu
O
(
=0.0 to 1.0). The clearest
indication of the Sr/Ca ratio was found to be the
axis, which ranged from 30.6
for x=0.8 to 30.9
for
x=0.0. Upon annealing, the
lattice parameter appeared to show
a linear relationship with oxygen content for all values of
,
and all varied over similar ranges but within different absolute
limits depending upon
. The simple T
vs.
relationship
just mentioned was not found to hold, however, with an almost
parabolic relationship for x=0.8, and even when more linear the
slope of the curve changed dramatically, becoming much steeper
for x=0.0. The T
which can be inferred from their
results showed a value of
95K for x=0.0 but was limited
to values less than 85K for higher values. In annealing studies
of lead doped epitaxial films, Balestrino [145]
found a similar dependence to that of Deshimaru [112]
in the relationship
between T
and annealing; but this time with the lead content. It
was also found that the
lattice parameter underwent a smaller
change with the annealing, the greater the lead content.
Direct determination of the carrier concentration in the CuO
planes can be made by Hall measurements. Assuming the oxygen changes do
take place in the Bi
O
layers, then the variation of
with
is an indication of the degree of charge transfer which
actually occurs between the layers. Hall measurements have been
carried out by, amongst others, Rateau [146],
Mitzi [140], and Nagoshi [111]. All provide
only limited data, but there is reasonable agreement upon the magnitude
of the changes. With oxygen loss, Nagoshi measured
decreasing from 4x
to 2x
carriers per cm
, and with oxygen
incorporation Mitzi measured an increase from 3.1x
to
4.6x
. A calculation can be made of the expected adjustment
in hole content based upon the accompanying measurement
of the change in
. As measured by Mitzi,
=0.29
and would be expected to contribute 0.58 holes p.f.u., compared to
the actual change measured from
of only 0.32 extra holes p.f.u..
This is an indication that a proportion of the holes do not contribute to
the mobile carrier concentration but are rather localised and responsible
for partially oxidising the BiO layer. A similar localisation of
holes is known to occur in the CuO chain layer of Y-123. Strong
support for this picture of charge transfer was provided by a study
of the bismuth valence by Schweizer [142] using a chemical
method. It was found that the bismuth valence varied linearly with oxygen
content, confirming that oxidation of the BiO layers occurs.
Scanning tunnelling spectroscopy (STS) and microscopy (STM)
techniques have been used in conjunction to probe changes in the
electronic state of the BiO layer (the methods are described in
detail by Zhang [147]). This is facilitated by the ease
with which Bi-2212 single crystals may be cleanly and reliably cleaved,
however, the studies are confined to the state of the single surface
BiO layer. Awana [148] was able to directly observe
excess oxygen atoms on this surface layer, and even observed the
changes due to oxygen annealing with additional oxygen being
incorporated in a disordered fashion in the STM image. It was found
that nitrogen annealing produced instead well ordered BiO images.
Whether the BiO layers may ever be entirely metallic is disputable,
but certainly the increased oxygen content was found to augment
the non-metallic nature of layers [148,149].
Their interpretation of the effects of this upon the superconductivity
are unfortunately wildly astray, suggesting that the decreasing
metallicity of the Bi
O
layers is wholly responsible for
the decrease in T
[148,150] but takes
no account of the overdoping of the CuO
layers by the
increasing oxygen content. A zero density
of states and non-metallic behaviour has also been reported by
Shih [70] using STS. A study by Wu [143]
of samples vacuum annealed for varying periods at 400
C, which
altered T
from 85K to non-superconducting, unlike Awana
[148] failed to observe any change in the STM images.
This led Wu (and has been taken up by others) to speculate that
the suppression of T
may not be due to oxygen loss from the
BiO layer. However, unlike the images of the Awana study, it is
not clear whether the images are of the bismuth or oxygen sub-lattices, and
as is admitted in the paper, if bismuth alone were being resolved this
would more simply explain the failing. A change was found
in the local electronic states near the Fermi level, with
non-periodic variations over a length scale of 20-30
observed in the non-superconducting samples, and which were
entirely absent from the as-grown samples. Wu suggested these
to be significant as they occur on the same scale as the
coherence length, and they may well be the result of oxygen
loss accommodated by the BiO layer by changes in the bismuth
coordination.
The behaviour of the normal state properties are also, of
course, strongly affected by the annealing related changes.
Because of the highly anisotropic nature of the transport
properties they must be considered separately within the
plane and perpendicular to it. As T
decreases
so the
plane resistivity
increases
systematically, as does the slope
[114].
The resistivity is linear and metallic-like down to
temperatures close to T
, but this can change for samples
rendered oxygen deficient by annealing where a semiconductor
like increase in
is observed above T
[151]. The
axis resistivity
is upwards of several orders of
magnitude larger than
due, it is believed, to the
localisation of the carriers within the CuO
planes and
the large separation of these by the insulating charge
reservoir layers. The behaviour of the normal state
properties are qualitatively the same amongst all high-T
superconductors. In an experiment by Yoo [133]
was found to range from semiconductor-like to
more metallic behaviour with increasing annealing temperature.
This, and the strong sample dependence of the behaviour, is
explained by some form of structural distortion between the
CuO
layers which leads to a reduction in the interlayer
coupling, and which is relieved by the annealing. The overall
behaviour can then be explained in the context of thermally
activated hopping between the CuO
layers.
The picture which emerges from this survey of the literature
is one in which the changes associated with oxygen diffusion
are complex, and are either contrary to, or are far from
adequately described by, the currently accepted
assumptions of oxygen behaviour in Bi-2212. The control
of oxygen stoichiometry by annealing can be used to range
over a substantial range of
and hence T
. There
is evidence that the full range of
is
greater than the
which can be
accounted for by the single excess oxygen model.
Although absolute values are difficult
to determine reliably, relative changes in oxygen content
of
have been commonly reported
amongst annealing experiments [135,140,152];
Mitzi [140], for example, observed a fully reversible
variation in
of 0.29(5) which corresponded with the
alteration of T
by 13K (the full range by which T
can
be varied is substantially larger). The variation of
oxygen in excess of
=0.2 must, therefore, involve
the variation of oxygen at additional crystallographic sites.
This is supported by the wide range of values summarised
in Table 3.1 of Chapter 3. A further commonly
cited assumption is that the modulation period is a function of
. But this runs contrary to the actual observations
of structure studies, and the results presented in Chapter 4
confirm this to be a false picture. Clear evidence for two distinct
sites comes also from the evolution of the annealing process with
temperature (this is further supported by the results presented
in Chapter 4). Most importantly, there is some suggestion that
alteration of the lower activation energy site alone is not sufficient
to achieve the highest values of T
[121].
There is also much evidence that substantial structural
adjustments accompany the variation of oxygen stoichiometry
[142,140,143,148]. That some form of structural
adjustments have additional influence beyond controlling
alone, and effecting T
, is a distinct possibility, and
would also explain the change in nature of
[133].
The oxygen content question therefore remains controversial, but
there is much to suggest that the commonly assumed picture is
at best a naive one, and that subtle oxygen related structural
adjustments have yet to be identified.